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| DATA SHEET COMPOUND TRANSISTOR AB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES * Current drive available up to 0.7 A * On-chip bias resistor * Low power consumption during drive PACKAGE DRAWING (UNIT: mm) AB1 SERIES LISTS Products AB1A4A AB1L2Q AB1A3M AB1F3P AB1J3P AB1L3N AB1A4M R1 (K) - 0.47 1.0 2.2 3.3 4.7 10 R2 (K) 10 4.7 1.0 10 10 10 10 ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) * IB(DC) PT Tj Tstg Ratings 30 25 10 0.7 1.0 0.02 750 150 -55 to +150 Unit V V V A A A mW C C * PW 10 ms, duty cycle 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D10836EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan (c) 2002 1998 AB1 SERIES AB1A4A ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VCE(sat) ** VIL ** R1 R2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A IC = 5.0 A, IC = 5 mA VCE = 5.0 V, IC = 100 A - 7 - 10 300 300 135 0.27 0.4 0.3 - 13 MIN. TYP. MAX. 100 Unit nA - - - V V k ** PW 350 s, duty cycle 2 % AB1L2Q ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.5 A VCE = 5.0 V, IC = 100 A 329 3.29 470 4.7 150 300 135 400 700 600 0.2 0.3 0.3 611 6.11 MIN. TYP. MAX. 100 Unit nA - - - V V k ** PW 350 s, duty cycle 2 % AB1A3M ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.5 A VCE = 5.0 V, IC = 100 A 0.7 0.7 1.0 1.0 80 100 135 0.3 0.4 0.3 1.3 1.3 MIN. TYP. MAX. 100 Unit nA - - - V V k k ** PW 350 s, duty cycle 2 % 2 Data Sheet D10836EJ2V0DS AB1 SERIES AB1F3P ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.3 A VCE = 5.0 V, IC = 100 A 1.54 7 2.2 10 300 300 135 0.3 0.3 2.86 13 MIN. TYP. MAX. 100 Unit nA - - - V V k k ** PW 350 s, duty cycle 2 % AB1J3P ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.2 A VCE = 5.0 V, IC = 100 A 2.31 7 3.3 10 300 300 135 600 700 600 0.14 0.3 0.3 4.29 13 MIN. TYP. MAX. 100 Unit nA - - - V V k k ** PW 350 s, duty cycle 2 % AB1L3N ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.2 A VCE = 5.0 V, IC = 100 A 3.29 7 4.7 10 300 300 135 0.3 0.3 6.11 13 MIN. TYP. MAX. 100 Unit nA - - - V V k k ** PW 350 s, duty cycle 2 % Data Sheet D10836EJ2V0DS 3 AB1 SERIES AB1A4M ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.2 A VCE = 5.0 V, IC = 100 A 7 7 10 10 300 300 135 0.3 0.3 13 13 MIN. TYP. MAX. 100 Unit nA - - - V V k k ** PW 350 s, duty cycle 2 % 4 Data Sheet D10836EJ2V0DS AB1 SERIES TYPICAL CHARACTERISTICS (TD = 25C) Data Sheet D10836EJ2V0DS 5 AB1 SERIES * The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 This datasheet has been download from: www..com Datasheets for electronics components. |
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